First-principles calculations of intrinsic defects in Al2O 3

Katsuyuki Matsunaga, Tomohito Tanaka, Takahisa Yamamoto, Yuichi Ikuhara

    Research output: Contribution to journalArticlepeer-review

    Abstract

    First-principles plane-wave pseudopotential calculations were performed to study electronic structures, structural relaxation, and energetics of intrinsic vacancies and interstitials in Al2O3. In the presence of the intrinsic point defects, extra levels appeared in the band gap. Considering various charge states for the intrinsic point defects, it was found that each point defect is most stable in its fully ionized state. From the formation energies of individual point defects, Schottky, O Frenkel, and Al Frenkel energies were also evaluated and were compared with previous results by experiment and static lattice calculations. Although previous static lattice calculations showed different relative stabilities of Schottky and Frenkel formation, depending on the choice of interatomic potentials, our calculations revealed that the relative values of formation energies are in the order of Schottky<Al Frenkel<O Frenkel, which is in good agreement with experimental data.

    Original languageEnglish
    Article number085110
    Pages (from-to)851101-851109
    Number of pages9
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume68
    Issue number8
    Publication statusPublished - 2003 Aug 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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