First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology

H. Honjo, T. V.A. Nguyen, S. Fukami, H. Sato, S. Ikeda, T. Hanyu, H. Ohno, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, S. Miura, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, A. Tamakoshi, M. Natsui, Y. MaH. Koike, Y. Takahashi, K. Furuya, H. Shen, T. Endoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

For the first time, we demonstrated 55 nm-CMOS/ spin-orbit-torque-device hybrid magnetic random-access memory (SOT-MRAM) cell with magnetic field free writing. For field free writing, we developed canted SOT device under 300 mm BEOL process full compatible with 400°C thermal tolerance. Moreover, we developed its advanced process as follows; SOT channel layer PVD process for high spin Hall angle under 400°C thermal tolerance, low damage RIE technology of MTJ for high TMR/thermal stability factor (Δ) and ultra-smooth surface metal via process under SOT channel to reduce contact resistance.By above developed technologies, our canted SOT devices fabricated under a 400°C thermal tolerance successfully achieved fast write speed of 0.35 ns without an external magnetic field, a large enough Δ of 70 for non-volatile memory (retention time is over 10 years), and a high TMR ratio of 167%, for the first time. Moreover, we successfully demonstrated field free SOT-MRAM performance.

Original languageEnglish
Title of host publication2019 IEEE International Electron Devices Meeting, IEDM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728140315
DOIs
Publication statusPublished - 2019 Dec
Event65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duration: 2019 Dec 72019 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2019-December
ISSN (Print)0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
CountryUnited States
CitySan Francisco
Period19/12/719/12/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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