First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications

S. W. Chang, J. H. Li, M. K. Huang, Y. C. Huang, S. T. Huang, H. C. Wang, Y. J. Huang, J. Y. Wang, L. W. Yu, Y. F. Huang, F. K. Hsueh, P. J. Sung, C. T. Wu, W. C.Y. Ma, K. H. Kao, Y. J. Lee, C. L. Lin, R. W. Chuang, K. P. Huang, S. SamukawaY. Li, W. H. Lee, T. Y. Chu, T. S. Chao, G. W. Huang, W. F. Wu, J. Y. Li, J. M. Shieh, W. K. Yeh, Y. H. Wang, D. D. Lu, C. J. Wang, N. C. Lin, C. J. Su, S. H. Lo, H. F. Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

For the first time, CMOS inverters and 6T-SRAM cells based on vertically stacked gate-all-around complementary FETs (CFETs) are experimentally demonstrated. Manufacturing difficulties of vertically stacked source and drain electrodes of the CFETs have been overcome by using junctionless transistors, thereby reducing the number of lithographic steps required. Furthermore, with post metallization treatments, both the voltage transfer characteristics (VTCs) of CMOS inverters and butterfly curves of SRAM show significant improvements due to the symmetry of nMOS and pMOS threshold voltages. Simulation shows that 3-dimensional CFET inverters have lower input parasitic capacitance than standard 2-dimensional CMOS, leading to reduced gate delay and lower power consumption.

Original languageEnglish
Title of host publication2019 IEEE International Electron Devices Meeting, IEDM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728140315
DOIs
Publication statusPublished - 2019 Dec
Event65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duration: 2019 Dec 72019 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2019-December
ISSN (Print)0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
CountryUnited States
CitySan Francisco
Period19/12/719/12/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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