First Demonstration of a High-Speed and High-Power-Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding

Yuki Yamada, Masahiro Nada, Miyuki Uomoto, Takehito Shimatsu, Fumito Nakajima, Hideaki Matsuzaki

Research output: Contribution to journalArticlepeer-review

Abstract

A novel high-speed photodiode (PD) with an InGaAs/Si structure fabricated by atomic-diffusion bonding (ADB) is proposed with the aim of improving the heat transfer. The fabricated PD shows a responsivity of 0.42 A W−1 and a 3 dB bandwidth of over 50 GHz. The maximum damage-threshold photocurrent, or high-power tolerance, is higher than that of a conventional PD on an InP substrate, thanks to the high thermal conductivity of Si used as the collector in the PD.

Original languageEnglish
JournalPhysica Status Solidi (A) Applications and Materials Science
DOIs
Publication statusAccepted/In press - 2020

Keywords

  • high-power tolerance
  • high-speed
  • photodiodes
  • wafer bonding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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