First Demonstration of 25-nm Quad Interface p-MTJ Device with Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM

K. Nishioka, S. Miura, H. Honjo, H. Inoue, T. Watanabe, T. Nasuno, Hiroshi Naganuma, T. V.A. Nguyen, Y. Noguchi, M. Yasuhira, S. Ikeda, T. Endoh

Research output: Contribution to journalArticlepeer-review

Abstract

We successfully developed 25-nm quad CoFeB/MgO-interfaces perpendicular magnetic tunnel junction (quad-MTJ) with enough thermal stability. To fabricate the quad-MTJ, a physical vapor deposition (PVD) process for depositing novel free layer and low resistance-area (RA) product MgO layer and low-damage fabrication processes were developed. The developed quad-MTJ technology and advanced process bring better tunnel magneto resistance (TMR) ratio and RA to quad-MTJ than those of double-interface MTJ (double-MTJ), even though quad-MTJ has an additional MgO layer. Scaling down the MTJ size to 25 nm, we demonstrated the advantages of quad-MTJ compared with double-MTJ as follows: 1) two times larger thermal stability factor ( $\Delta $ ), which results in over ten years retention; 2) superiority of large $\Delta $ in the measuring temperature range up to 200 °C; 3) 1.5 times higher write efficiency; 4) lower write current at short write pulse regions at less than 100 ns; and e) excellent endurance of over 1011 thanks to higher write efficiency, which results from the reduced voltage owing to low RA and the low damage integration process technology. As a result, the developed quad-MTJ technologies will open the way for the realization of high-density STT-MRAM with low power, high speed, high reliability, and excellent scalability down to $2\times $ nm node.

Original languageEnglish
Article number9422110
Pages (from-to)2680-2685
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume68
Issue number6
DOIs
Publication statusPublished - 2021 Jun

Keywords

  • Interfacial anisotropy type magnetic tunnel junction (MTJ)
  • low resistance-area (RA) product MGO
  • quad interface
  • spin-transfer-torque magnetoresistive random access memory (STT-MRAM)
  • thermal stability factor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'First Demonstration of 25-nm Quad Interface p-MTJ Device with Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM'. Together they form a unique fingerprint.

Cite this