Finite element method analysis of nanoscratch test for the evaluation of interface adhesion strength in Cu thin films on Si substrate

Atsuko Sekiguchi, Junichi Koike

Research output: Contribution to journalArticle

Abstract

Mechanical processes of the nanoscratch test are investigated using a finite element analysis of Cu/Ta/SiO2/Si multilayer films. The calculated stress distribution at the moment of delamination suggests that delamination occurs in a small region of approximately 100 nm. The driving force for delamination is the stress concentration due to strain-incompatibility at the Cu/ Ta interface resulting from the large plastic deformation in Cu. The degree of stress concentration is found to depend on internal variables, such as plastic deformation, residual stress, and the elastic modulus, and on the magnitude of lateral force.

Original languageEnglish
Pages (from-to)249-256
Number of pages8
JournalJapanese journal of applied physics
Volume47
Issue number1
DOIs
Publication statusPublished - 2008 Jan 18

Keywords

  • Adhesion
  • Cu
  • Elasticity
  • Nanoscratch
  • Plasticity
  • Residual stress
  • Simulation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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