FinFET flash memory technology

Y. X. Liu, T. Kamei, T. Matsukawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, K. Sakamoto, A. Ogura, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The crystal-Si and poly-Si fin-channel flash memories with a thin n +-poly-Si floating-gate (FG) layer have successfully been fabricated, and their electrical characteristics have systematically been investigated. It was experimentally found that the better short-channel effect (SCE) immunity, the smaller threshold voltage (V t) variations and a higher program speed are obtained in the crystal-Si fin-channel tri-gate (TG)-type flash memories than in the double-gate (DG)-type ones. It was also confirmed that split-gate crystal-Si fin-channel flash memories show highly suppressed over-erase as compared to that in stack-gate memories. Moreover, it was found that V t variation in the poly-Si fin-channel flash memories after a program/erase (P/E) cycle became comparable to that in the crystal-Si fin-channel memories. The measured source-drain breakdown voltage (BV DS) was higher than 3.2 V even the gate length (L g) was down to 76 nm. The developed technology is very useful for the fabrication of scaled NOR-type flash memory.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 5
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Pages289-310
Number of pages22
Edition3
DOIs
Publication statusPublished - 2012 Nov 19
Externally publishedYes
Event5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
Duration: 2012 May 62012 May 10

Publication series

NameECS Transactions
Number3
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period12/5/612/5/10

ASJC Scopus subject areas

  • Engineering(all)

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