FinFET-based flex-Vth SRAM design for drastic standby-leakage-current reduction

Shin Ichi O'uchi, Meishoku Masahara, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Toshihiro Sekigawa, Hanpel Koike, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Fingerprint

Dive into the research topics of 'FinFET-based flex-Vth SRAM design for drastic standby-leakage-current reduction'. Together they form a unique fingerprint.

Engineering & Materials Science

Chemical Compounds