Fin-height controlled TiN-gate FinFET CMOS based on experimental mobility

Y. X. Liu, T. Matsukawa, K. Endo, M. Masahrara, S. O'uchi, H. Yamauchi, K. Ishii, J. Tsukada, Y. Ishikawa, K. Sakamoto, E. Suzuki

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This paper presents the fin-height controlled TiN-gate FinFET CMOS technology based on the experimental carrier mobility data. The good current matching by tuning the N-channel fin-height and the excellent transfer performance in the fabricated TiN-gate CMOS inverter are demonstrated. The developed technologies are attractive to materialize the high-performance FinFET CMOS circuits.

Original languageEnglish
Pages (from-to)2101-2104
Number of pages4
JournalMicroelectronic Engineering
Volume84
Issue number9-10
DOIs
Publication statusPublished - 2007 Sep 1
Externally publishedYes

Keywords

  • Current matching
  • Fin-height control
  • FinFET
  • Mobility
  • Orientation-dependent wet etching
  • TiN-gate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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  • Cite this

    Liu, Y. X., Matsukawa, T., Endo, K., Masahrara, M., O'uchi, S., Yamauchi, H., Ishii, K., Tsukada, J., Ishikawa, Y., Sakamoto, K., & Suzuki, E. (2007). Fin-height controlled TiN-gate FinFET CMOS based on experimental mobility. Microelectronic Engineering, 84(9-10), 2101-2104. https://doi.org/10.1016/j.mee.2007.04.080