Film/substrate orientation relationship in the aln/6h-sic epitaxial system

Stemmer Susanne, Pirouz Pirouz, Ikuhara Yuichi, R. F. Davis

    Research output: Contribution to journalArticlepeer-review

    66 Citations (Scopus)

    Abstract

    AlN has been grown on the (0001) basal and (11-00) prism faces of 6H-SiC. High resolution transmission electron microscopy studies show that, despite the very different symmetries of these two substrate planes and their polar and nonpolar natures, the film/substrate orientation relationship is identical for both systems. It is shown that this result is consistent with a geometrical method recently proposed for determining the orientation relationship between two crystals in a bicrystal.

    Original languageEnglish
    Pages (from-to)1797-1800
    Number of pages4
    JournalPhysical review letters
    Volume77
    Issue number9
    DOIs
    Publication statusPublished - 1996

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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