Film/substrate orientation relationship in the aln/6h-sic epitaxial system

Stemmer Susanne, Pirouz Pirouz, Ikuhara Yuichi, R. F. Davis

Research output: Contribution to journalArticlepeer-review

66 Citations (Scopus)


AlN has been grown on the (0001) basal and (11-00) prism faces of 6H-SiC. High resolution transmission electron microscopy studies show that, despite the very different symmetries of these two substrate planes and their polar and nonpolar natures, the film/substrate orientation relationship is identical for both systems. It is shown that this result is consistent with a geometrical method recently proposed for determining the orientation relationship between two crystals in a bicrystal.

Original languageEnglish
Pages (from-to)1797-1800
Number of pages4
JournalPhysical review letters
Issue number9
Publication statusPublished - 1996
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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