Field-modulated thermopower in SrTiO3 -based field-effect transistors with amorphous 12CaO7 Al2 O3 glass gate insulator

Hiromichi Ohta, Yumi Masuoka, Ryoji Asahi, Takeharu Kato, Yuichi Ikuhara, Kenji Nomura, Hideo Hosono

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    48 Citations (Scopus)


    We report transistor characteristics and field-modulated thermopower (S) for single crystal SrTiO3 -based field-effect transistors (FETs). We use 150-nm-thick amorphous 12CaO7 Al2 O3 glass as the gate insulator of the SrTiO3 -FET. The resulting SrTiO3 -FET exhibits excellent transistor characteristics at room temperature: on-to-off current ratio greater than 106, threshold gate voltage of +1.1 V, subthreshold swing of approximately 0.3 V decade-1, and effective mobility of 2 cm2 V-1 s-1. The field-modulated S -value of the SrTiO3 -FET varied from -900 to -580 μV K -1 with electric fields of up to 2 MV cm-1, demonstrating the effectiveness of the FET structure for the exploration of thermoelectric materials.

    Original languageEnglish
    Article number113505
    JournalApplied Physics Letters
    Issue number11
    Publication statusPublished - 2009

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)


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