Field ion-scanning tunneling microscopy study of c84 on the si(100) surface

Tomihiro Hashizume, Xiang Dong Wang, Yuichiro Nishina, Hisanori Shinohara, Yahachi Saito, Toshio Sakurai

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

Initial stage and monolayer/multilayer adsorption of C84 fullerene on the Si(100)2 x 1 surface was investigated by field ion-scanning tunneling microscopy. The C84 molecules reside stably at room temperature in the trough formed by Si dimer rows. The nearest neighbour distance of the C84 molecules is approximately 14 A. For the first and second layers, only the disordered adsorption geometry was observed. When C84 was deposited while keeping the substrate at 100 to 150 °C, the fee crystal formation was observed above the third layer with its lattice constant of 17.1 A.

Original languageEnglish
Pages (from-to)L132-L134
JournalJapanese journal of applied physics
Volume32
Issue number1 A
DOIs
Publication statusPublished - 1993 Jan
Externally publishedYes

Keywords

  • C/fullerenes
  • Fee
  • STM
  • Si
  • Si(100)
  • Single crystal

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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