Field ion-scanning tunneling microscopy study of c84 on the si(100) surface

Tomihiro Hashizume, Xiang Dong Wang, Yuichiro Nishina, Hisanori Shinohara, Yahachi Saito, Toshio Sakurai

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    30 Citations (Scopus)

    Abstract

    Initial stage and monolayer/multilayer adsorption of C84 fullerene on the Si(100)2 x 1 surface was investigated by field ion-scanning tunneling microscopy. The C84 molecules reside stably at room temperature in the trough formed by Si dimer rows. The nearest neighbour distance of the C84 molecules is approximately 14 A. For the first and second layers, only the disordered adsorption geometry was observed. When C84 was deposited while keeping the substrate at 100 to 150 °C, the fee crystal formation was observed above the third layer with its lattice constant of 17.1 A.

    Original languageEnglish
    Pages (from-to)L132-L134
    JournalJapanese journal of applied physics
    Volume32
    Issue number1 A
    DOIs
    Publication statusPublished - 1993 Jan

    Keywords

    • C/fullerenes
    • Fee
    • STM
    • Si
    • Si(100)
    • Single crystal

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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