Field ion-scanning tunneling microscopy study of c60 on the si(100) surface

Tomihiro Hashizume, Xiang Dong Wang, Yuichiro Nishina, Hisanori Shinohara, Yahachi Saito, Young Kuk, Toshio Sakurai

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    161 Citations (Scopus)

    Abstract

    Field ion-scanning tunneling microscopy was employed to study the monolayer and multilayer adsorption behaviors of the C60 fullerene on the Si(100)2×1 surface. The C60 molecules reside stably in the trough at room temperature without rotation, encompassing the 8 neighbouring dimer-forming surface Si atoms with the nearest neighbour distance of 12 Å. For the first and second layers, only local ordering of square and quasi-hexagonal patterns was observed. The orderly Stranski-Krastanov mode island formation with the hexagonal packing was observed above the third layer with its lattice constant of 10.4 Å.

    Original languageEnglish
    Pages (from-to)L880-L883
    JournalJapanese journal of applied physics
    Volume31
    Issue number7
    DOIs
    Publication statusPublished - 1992 Jul

    Keywords

    • Alkali-doping
    • C60
    • Fullerenes
    • STM
    • Si
    • Si(100)

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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