Field-induced transition of f electron nature in CeRu2Si2

Hayuyoshi Aoki, S. Uji, T. Terashima, M. Takashita, Y. Onuki

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We have studied the de Haas-van Alphen (dHvA) effect for field ranges both below and above the metamagnetic transition field (Hm) in CeRu2Si2. The Fermi surfaces are found to change from those of the itinerant 4f electrons below Hm to those of the localized 4f electrons above Hm. The dHvA frequency around Hm has been measured in detail as function of magnetic field strength and temperature. The observed variation of the frequency implies that the transition of the Fermi surface becomes less sharp at higher temperatures.

Original languageEnglish
Pages (from-to)231-234
Number of pages4
JournalPhysica B: Physics of Condensed Matter
Volume201
Issue numberC
DOIs
Publication statusPublished - 1994 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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