We have studied the de Haas-van Alphen (dHvA) effect for field ranges both below and above the metamagnetic transition field (Hm) in CeRu2Si2. The Fermi surfaces are found to change from those of the itinerant 4f electrons below Hm to those of the localized 4f electrons above Hm. The dHvA frequency around Hm has been measured in detail as function of magnetic field strength and temperature. The observed variation of the frequency implies that the transition of the Fermi surface becomes less sharp at higher temperatures.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering