TY - JOUR
T1 - Field-induced superconductivity in electric double layer transistors
AU - Ueno, Kazunori
AU - Shimotani, Hidekazu
AU - Yuan, Hongtao
AU - Ye, Jianting
AU - Kawasaki, Masashi
AU - Iwasa, Yoshihiro
N1 - Funding Information:
This work was supported in part by Grants-in-Aid for Scientific Research (Nos. 21686002, 21224009, 20540343, 25000003, 25220604, 24226002, and 25708039), by one on Innovative Area “Topological Quantum Phenomena” from the Ministry of Education, Culture, Sports, Science and Technology, Japan, and by the Japan Society for the Promotion of Science (JSPS) through its “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)”. Y.I. was supported by the Japan Science and Technology Agency (JST) through the Strategic International Collaborative Research Program (SICORP, LEMSUPER).
Publisher Copyright:
©2014 The Physical Society of Japan.
PY - 2014/3/15
Y1 - 2014/3/15
N2 - Electric field tuning of superconductivity has been a long-standing issue in solid state physics since the invention of the field-effect transistor (FET) in 1960. Owing to limited available carrier density in conventional FET devices, electricfield-induced superconductivity was believed to be possible in principle but impossible in practice. However, in the past several years, this limitation has been overcome by the introduction of an electrochemical concept, and electric-fieldinduced superconductivity has been realized. In the electric double layer (EDL) formed at the electrochemical interfaces, an extremely high electric field is generated and hence high-density charge carriers sufficient to induce superconductivity exist and are collectively used as a charge accumulation device known as an EDL capacitor. Field-induced superconductivity has been used to establish the relationship between Tc and carrier density and can now be used to search for new superconductors. Here, we review electric-field-induced superconductivity using an FET device, with a particular focus on the latest advances in EDL transistors.
AB - Electric field tuning of superconductivity has been a long-standing issue in solid state physics since the invention of the field-effect transistor (FET) in 1960. Owing to limited available carrier density in conventional FET devices, electricfield-induced superconductivity was believed to be possible in principle but impossible in practice. However, in the past several years, this limitation has been overcome by the introduction of an electrochemical concept, and electric-fieldinduced superconductivity has been realized. In the electric double layer (EDL) formed at the electrochemical interfaces, an extremely high electric field is generated and hence high-density charge carriers sufficient to induce superconductivity exist and are collectively used as a charge accumulation device known as an EDL capacitor. Field-induced superconductivity has been used to establish the relationship between Tc and carrier density and can now be used to search for new superconductors. Here, we review electric-field-induced superconductivity using an FET device, with a particular focus on the latest advances in EDL transistors.
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U2 - 10.7566/JPSJ.83.032001
DO - 10.7566/JPSJ.83.032001
M3 - Review article
AN - SCOPUS:84988432227
VL - 83
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
SN - 0031-9015
IS - 3
M1 - 032001
ER -