Field-induced carrier delocalization in the strain-induced mott insulating state of an organic superconductor

Yoshitaka Kawasugi, Hiroshi M. Yamamoto, Naoya Tajima, Takeo Fukunaga, Kazuhito Tsukagoshi, Reizo Kato

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)

Abstract

We report the influence of the field effect on the dc resistance and Hall coefficient in the strain-induced Mott insulating state of an organic superconductor κ-(BEDT-TTF)2Cu[N(CN)2]Br. Conductivity obeys the formula for an activated transport σ□=σ0exp(-W/kBT), where σ0 is a constant and W depends on the gate voltage. The gate-voltage dependence of the Hall coefficient shows that, unlike in conventional field-effect transistors, the effective mobility of dense hole carriers (∼1.6×1014cm-2) is enhanced by a positive gate voltage. This implies that carrier doping involves delocalization of intrinsic carriers that were initially localized due to electron correlation.

Original languageEnglish
Article number116801
JournalPhysical review letters
Volume103
Issue number11
DOIs
Publication statusPublished - 2009 Sep 8
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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