Field-emission and photo-detection characteristics of laser molecular beam epitaxy grown homoepitaxial GaN nanowall networks

Prashant Tyagi; Ch Ramesh; Alka Sharma; Sudhir Husale; S. S. Kushvaha; M. Senthil Kumar

doi:10.1016/j.mssp.2019.03.015

Field-emission and photo-detection characteristics of laser molecular beam epitaxy grown homoepitaxial GaN nanowall networks

Prashant Tyagi, Ch Ramesh, Alka Sharma, Sudhir Husale, S. S. Kushvaha, M. Senthil Kumar

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Field emission and photo-detection properties of homoepitaxial GaN nanowall network structure grown on GaN template by laser molecular beam epitaxy technique are demonstrated. The GaN nanowall network has a tip-width of 8–12 nm and exhibited a band-edge photoluminescence emission at 3.53 eV. From the field-emission characterization, a very low turn-on field of 0.68 V/μm and a high emission current density of 2.22 mA/cm ² (at 2.38 V/μm) are observed. Photo-detection measurements were also performed on the GaN nanowall network structure under ultraviolet (UV) light irradiation using metal-semiconductor-metal device structure where, a photo-responsivity of 7.28 A/W is obtained at 3 V biasing.

Original language	English
Pages (from-to)	80-84
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	97
DOIs	https://doi.org/10.1016/j.mssp.2019.03.015
Publication status	Published - 2019 Jul
Externally published	Yes

Keywords

Epitaxial growth
Field-emission
GaN
Nanocrystalline materials
Photo-detection

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2019.03.015

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@article{48956516cb6d4858892e6999d50ada6b,

title = "Field-emission and photo-detection characteristics of laser molecular beam epitaxy grown homoepitaxial GaN nanowall networks",

abstract = " Field emission and photo-detection properties of homoepitaxial GaN nanowall network structure grown on GaN template by laser molecular beam epitaxy technique are demonstrated. The GaN nanowall network has a tip-width of 8–12 nm and exhibited a band-edge photoluminescence emission at 3.53 eV. From the field-emission characterization, a very low turn-on field of 0.68 V/μm and a high emission current density of 2.22 mA/cm 2 (at 2.38 V/μm) are observed. Photo-detection measurements were also performed on the GaN nanowall network structure under ultraviolet (UV) light irradiation using metal-semiconductor-metal device structure where, a photo-responsivity of 7.28 A/W is obtained at 3 V biasing. ",

keywords = "Epitaxial growth, Field-emission, GaN, Nanocrystalline materials, Photo-detection",

author = "Prashant Tyagi and Ch Ramesh and Alka Sharma and Sudhir Husale and Kushvaha, {S. S.} and {Senthil Kumar}, M.",

note = "Funding Information: The authors would like to thank Dr. B.S. Yadav for the assistance in sample characterization. Ch. Ramesh and P. Tyagi are grateful to the Council of Scientific and Industrial Research, India ( CSIR ) for the award of senior research fellowship. Funding Information: The authors would like to thank Dr. B.S. Yadav for the assistance in sample characterization. Ch. Ramesh and P. Tyagi are grateful to the Council of Scientific and Industrial Research, India (CSIR) for the award of senior research fellowship. Publisher Copyright: {\textcopyright} 2019",

year = "2019",

month = jul,

doi = "10.1016/j.mssp.2019.03.015",

language = "English",

volume = "97",

pages = "80--84",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Field-emission and photo-detection characteristics of laser molecular beam epitaxy grown homoepitaxial GaN nanowall networks

AU - Tyagi, Prashant

AU - Ramesh, Ch

AU - Sharma, Alka

AU - Husale, Sudhir

AU - Kushvaha, S. S.

AU - Senthil Kumar, M.

N1 - Funding Information: The authors would like to thank Dr. B.S. Yadav for the assistance in sample characterization. Ch. Ramesh and P. Tyagi are grateful to the Council of Scientific and Industrial Research, India ( CSIR ) for the award of senior research fellowship. Funding Information: The authors would like to thank Dr. B.S. Yadav for the assistance in sample characterization. Ch. Ramesh and P. Tyagi are grateful to the Council of Scientific and Industrial Research, India (CSIR) for the award of senior research fellowship. Publisher Copyright: © 2019

PY - 2019/7

Y1 - 2019/7

N2 - Field emission and photo-detection properties of homoepitaxial GaN nanowall network structure grown on GaN template by laser molecular beam epitaxy technique are demonstrated. The GaN nanowall network has a tip-width of 8–12 nm and exhibited a band-edge photoluminescence emission at 3.53 eV. From the field-emission characterization, a very low turn-on field of 0.68 V/μm and a high emission current density of 2.22 mA/cm 2 (at 2.38 V/μm) are observed. Photo-detection measurements were also performed on the GaN nanowall network structure under ultraviolet (UV) light irradiation using metal-semiconductor-metal device structure where, a photo-responsivity of 7.28 A/W is obtained at 3 V biasing.

AB - Field emission and photo-detection properties of homoepitaxial GaN nanowall network structure grown on GaN template by laser molecular beam epitaxy technique are demonstrated. The GaN nanowall network has a tip-width of 8–12 nm and exhibited a band-edge photoluminescence emission at 3.53 eV. From the field-emission characterization, a very low turn-on field of 0.68 V/μm and a high emission current density of 2.22 mA/cm 2 (at 2.38 V/μm) are observed. Photo-detection measurements were also performed on the GaN nanowall network structure under ultraviolet (UV) light irradiation using metal-semiconductor-metal device structure where, a photo-responsivity of 7.28 A/W is obtained at 3 V biasing.

KW - Epitaxial growth

KW - Field-emission

KW - GaN

KW - Nanocrystalline materials

KW - Photo-detection

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U2 - 10.1016/j.mssp.2019.03.015

DO - 10.1016/j.mssp.2019.03.015

M3 - Article

AN - SCOPUS:85063036684

VL - 97

SP - 80

EP - 84

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -

Field-emission and photo-detection characteristics of laser molecular beam epitaxy grown homoepitaxial GaN nanowall networks

Abstract

Keywords

ASJC Scopus subject areas

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