Field-emission and photo-detection characteristics of laser molecular beam epitaxy grown homoepitaxial GaN nanowall networks

Prashant Tyagi, Ch Ramesh, Alka Sharma, Sudhir Husale, S. S. Kushvaha, M. Senthil Kumar

Research output: Contribution to journalArticlepeer-review

Abstract

Field emission and photo-detection properties of homoepitaxial GaN nanowall network structure grown on GaN template by laser molecular beam epitaxy technique are demonstrated. The GaN nanowall network has a tip-width of 8–12 nm and exhibited a band-edge photoluminescence emission at 3.53 eV. From the field-emission characterization, a very low turn-on field of 0.68 V/μm and a high emission current density of 2.22 mA/cm 2 (at 2.38 V/μm) are observed. Photo-detection measurements were also performed on the GaN nanowall network structure under ultraviolet (UV) light irradiation using metal-semiconductor-metal device structure where, a photo-responsivity of 7.28 A/W is obtained at 3 V biasing.

Original languageEnglish
Pages (from-to)80-84
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume97
DOIs
Publication statusPublished - 2019 Jul
Externally publishedYes

Keywords

  • Epitaxial growth
  • Field-emission
  • GaN
  • Nanocrystalline materials
  • Photo-detection

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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