Abstract
Field emission and photo-detection properties of homoepitaxial GaN nanowall network structure grown on GaN template by laser molecular beam epitaxy technique are demonstrated. The GaN nanowall network has a tip-width of 8–12 nm and exhibited a band-edge photoluminescence emission at 3.53 eV. From the field-emission characterization, a very low turn-on field of 0.68 V/μm and a high emission current density of 2.22 mA/cm 2 (at 2.38 V/μm) are observed. Photo-detection measurements were also performed on the GaN nanowall network structure under ultraviolet (UV) light irradiation using metal-semiconductor-metal device structure where, a photo-responsivity of 7.28 A/W is obtained at 3 V biasing.
Original language | English |
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Pages (from-to) | 80-84 |
Number of pages | 5 |
Journal | Materials Science in Semiconductor Processing |
Volume | 97 |
DOIs | |
Publication status | Published - 2019 Jul |
Externally published | Yes |
Keywords
- Epitaxial growth
- Field-emission
- GaN
- Nanocrystalline materials
- Photo-detection
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering