TY - JOUR
T1 - Field-Effect Transistors with Submicrometer Gate Lengths Fabricated from LaAlO3-SrTiO3 -Based Heterostructures
AU - Woltmann, C.
AU - Harada, T.
AU - Boschker, H.
AU - Srot, V.
AU - Van Aken, P. A.
AU - Klauk, H.
AU - Mannhart, J.
PY - 2015/12/14
Y1 - 2015/12/14
N2 - The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO3-SrTiO3 heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 μm, with a characteristic behavior comparable to semiconducting devices. With the fabrication of field-effect transistors with gate lengths as small as 60 nm, the results demonstrate the possibility to fabricate by electron-beam lithography functional devices based on complex oxides with characteristic lengths of several tens of nanometers.
AB - The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO3-SrTiO3 heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 μm, with a characteristic behavior comparable to semiconducting devices. With the fabrication of field-effect transistors with gate lengths as small as 60 nm, the results demonstrate the possibility to fabricate by electron-beam lithography functional devices based on complex oxides with characteristic lengths of several tens of nanometers.
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U2 - 10.1103/PhysRevApplied.4.064003
DO - 10.1103/PhysRevApplied.4.064003
M3 - Article
AN - SCOPUS:84951090560
VL - 4
JO - Physical Review Applied
JF - Physical Review Applied
SN - 2331-7019
IS - 6
M1 - 064003
ER -