Field-Effect Transistors with Submicrometer Gate Lengths Fabricated from LaAlO3-SrTiO3 -Based Heterostructures

C. Woltmann, T. Harada, H. Boschker, V. Srot, P. A. Van Aken, H. Klauk, J. Mannhart

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO3-SrTiO3 heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 μm, with a characteristic behavior comparable to semiconducting devices. With the fabrication of field-effect transistors with gate lengths as small as 60 nm, the results demonstrate the possibility to fabricate by electron-beam lithography functional devices based on complex oxides with characteristic lengths of several tens of nanometers.

Original languageEnglish
Article number064003
JournalPhysical Review Applied
Volume4
Issue number6
DOIs
Publication statusPublished - 2015 Dec 14

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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