Field effect transistors for fast terahertz detection and imaging

W. Knap, S. Nadar, H. Videlier, S. Boubanga-Tombet, D. Coquillat, N. Dyakonova, F. Teppe, K. Karpierz, J. Łusakowski, M. Sakowicz, D. Seliuta, I. Kasalynas, G. Valušis, S. Monfray, T. Skotnicki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present recent results on detection of terahertz radiation with nanometer size GaAs FETs and Si MOSFETs at room temperature. We demonstrate that the detection sensitivity and speed allows application of the transistors in terahertz imaging systems. At low temperatures the transistors can act as magnetic field tunable detectors.

Original languageEnglish
Title of host publication4th Microwave and Radar Week, MRW-2010 - 18th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2010 - Conference Proceedings
Publication statusPublished - 2010 Nov 1
Event4th Microwave and Radar Week, MRW-2010 - 18th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2010 - Vilnius, Lithuania
Duration: 2010 Jun 142010 Jun 16

Publication series

Name4th Microwave and Radar Week, MRW-2010 - 18th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2010 - Conference Proceedings

Conference

Conference4th Microwave and Radar Week, MRW-2010 - 18th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2010
Country/TerritoryLithuania
CityVilnius
Period10/6/1410/6/16

Keywords

  • Field effect transistor
  • Plasma waves
  • Quantizing magnetic fields
  • Terahertz imaging

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Communication

Fingerprint

Dive into the research topics of 'Field effect transistors for fast terahertz detection and imaging'. Together they form a unique fingerprint.

Cite this