Field effect transistors based on organic semiconductors and graphene

Katsumi Tanigaki, Susumu Ikeda, Ryo Nouchi, Yan Wang, Fan Xiaoyan, Ryotaro Kumashiro, Nobuhiko Mitoma

Research output: Contribution to conferencePaperpeer-review

Abstract

Organic semiconductors and graphene are described as new field effect transistors (FETs). Graphene shows high mobility as well as long spin coherent length, because of the mass-less Dirac states and the small spin-orbit coupling, relevant in spintronics. Ambipolar carrier injection can be realized in organic semiconductors useful for future optoelectronics.

Original languageEnglish
Pages1817-1820
Number of pages4
Publication statusPublished - 2010
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: 2010 Dec 12010 Dec 3

Other

Other17th International Display Workshops, IDW'10
Country/TerritoryJapan
CityFukuoka
Period10/12/110/12/3

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction

Fingerprint

Dive into the research topics of 'Field effect transistors based on organic semiconductors and graphene'. Together they form a unique fingerprint.

Cite this