Field effect transistors based on organic semiconductors and graphene

Katsumi Tanigaki, Susumu Ikeda, Ryo Nouchi, Yan Wang, Fan Xiaoyan, Ryotaro Kumashiro, Nobuhiko Mitoma

Research output: Contribution to conferencePaper

Abstract

Organic semiconductors and graphene are described as new field effect transistors (FETs). Graphene shows high mobility as well as long spin coherent length, because of the mass-less Dirac states and the small spin-orbit coupling, relevant in spintronics. Ambipolar carrier injection can be realized in organic semiconductors useful for future optoelectronics.

Original languageEnglish
Pages1817-1820
Number of pages4
Publication statusPublished - 2010
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: 2010 Dec 12010 Dec 3

Other

Other17th International Display Workshops, IDW'10
CountryJapan
CityFukuoka
Period10/12/110/12/3

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction

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  • Cite this

    Tanigaki, K., Ikeda, S., Nouchi, R., Wang, Y., Xiaoyan, F., Kumashiro, R., & Mitoma, N. (2010). Field effect transistors based on organic semiconductors and graphene. 1817-1820. Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.