Field-effect transistor with deposited graphite thin film

Hiroshi Inokawa, Masao Nagase, Shigeru Hirono, Touichiro Goto, Hiroshi Yamaguchi, Keiichi Torimitsu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

By using a bottom-gate top-contact field-effect transistor structure, the field effect of graphite-rich carbon nanocrystallite thin films deposited by electron cyclotron resonance sputtering was investigated. An appreciable ambipolar field effect was observed at the film edge where the thickness was vanishing. On-off current ratios of 2 and 7 were attained at 294 and 150 K, respectively.

Original languageEnglish
Pages (from-to)2615-2617
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
Publication statusPublished - 2007 Apr 24
Externally publishedYes

Keywords

  • Electron cyclotron resonance (ECR) sputtering
  • Field-effect transistor (FET)
  • Graphite

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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