Field-effect transistor based on organosoluble germanium nanoclusters

Akira Watanabe, Fusao Hojo, Takao Miwa

    Research output: Contribution to journalArticlepeer-review

    16 Citations (Scopus)

    Abstract

    The structural and electrical properties of organosoluble germanium nanoclusters are studied. The organogermanium nanocluster (OGE) is a polygermane with a three-dimensional σ-conjugated chain. The OGE is prepared from GeCl4 by a simple one-pot reaction, where the germanium nanocluster is obtained by the reaction of GeCl4 using magnesium metal and the capping reaction of the chlorine group by an alkyl Grignard reagent in tetrahydrofuran. The optical energy gap of the tert-butyl-substituted OGE is lower than that of the n-propyl-substituted OGE, corresponding to the higher molecular weight and the larger extent of the σ-conjugation along the Ge-Ge chain. The conductivity of the OGE is enhanced by heat treatment, which induces the elimination of organic substituents, the reconstruction of the Ge-Ge chain, and the extension of a three-dimensional germanium network among germanium clusters. The field-effect transistor fabricated by a coating technique using the tert-butyl-substituted OGE shows signal amplification properties.

    Original languageEnglish
    Pages (from-to)530-537
    Number of pages8
    JournalApplied Organometallic Chemistry
    Volume19
    Issue number4
    DOIs
    Publication statusPublished - 2005 Apr 1

    Keywords

    • Field-effect transistor
    • Germanium nanocluster
    • Polygermane

    ASJC Scopus subject areas

    • Chemistry(all)
    • Inorganic Chemistry

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