Field-effect transistor based on atomically flat rutile TiO2

Masao Katayama, Shinya Ikesaka, Jun Kuwano, Yuichi Yamamoto, Hideomi Koinuma, Yuji Matsumoto

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Abstract

The authors have fabricated a field-effect transistor (FET) based on a rutile Ti O2 active channel. Top-gate transistor structure with an amorphous LaAl O3 insulator was fabricated on the ultrasmoothed rutile single crystals. Reproducible n -type FET actions were observed only by the use of ultrasmoothed Ti O2 surfaces. Moreover, an anisotropy of the field-effect mobility depending on the channel direction, which reflects intrinsic nature of rutile, was definitely observed. Inserting MgO insulating buffer between Ti O2 and amorphous LaAl O3 suppressed the off-state current and realized on-to-off current ratio as high as 104.

Original languageEnglish
Article number242103
JournalApplied Physics Letters
Volume89
Issue number24
DOIs
Publication statusPublished - 2006 Dec 29
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Katayama, M., Ikesaka, S., Kuwano, J., Yamamoto, Y., Koinuma, H., & Matsumoto, Y. (2006). Field-effect transistor based on atomically flat rutile TiO2. Applied Physics Letters, 89(24), [242103]. https://doi.org/10.1063/1.2404980