Field-effect modulation of the transport properties of nondoped SrTiO 3

Keisuke Shibuya, Tsuyoshi Ohnishi, Takayuki Uozumi, Taisuke Sato, Mikk Lippmaa, Masashi Kawasaki, Kiyomi Nakajima, Toyohiro Chikyow, Hideomi Koinuma

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


We have fabricated SrTi O3 (100) single crystal field-effect transistors with amorphous and epitaxial CaHf O3 gate insulator layers. The devices with amorphous insulator layers showed nearly temperature independent behavior. The transistors with epitaxial interfaces exhibited a large improvement over the amorphous devices. The field-effect mobility was found to increase at low temperature, reaching 35 cm2 V s at 50 K. This result shows that the carriers accumulated by the field effect on the SrTi O3 side of the gate interface behaved as would be expected for electron-doped SrTi O3. An insulator-metal transition, induced by field-effect doping, was observed in epitaxial SrTi O3 -based transistors.

Original languageEnglish
Article number212116
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2006 May 21
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Field-effect modulation of the transport properties of nondoped SrTiO 3'. Together they form a unique fingerprint.

Cite this