Field-effect modulation of the transport properties of nondoped SrTiO 3

Keisuke Shibuya, Tsuyoshi Ohnishi, Takayuki Uozumi, Taisuke Sato, Mikk Lippmaa, Masashi Kawasaki, Kiyomi Nakajima, Toyohiro Chikyow, Hideomi Koinuma

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Abstract

We have fabricated SrTi O3 (100) single crystal field-effect transistors with amorphous and epitaxial CaHf O3 gate insulator layers. The devices with amorphous insulator layers showed nearly temperature independent behavior. The transistors with epitaxial interfaces exhibited a large improvement over the amorphous devices. The field-effect mobility was found to increase at low temperature, reaching 35 cm2 V s at 50 K. This result shows that the carriers accumulated by the field effect on the SrTi O3 side of the gate interface behaved as would be expected for electron-doped SrTi O3. An insulator-metal transition, induced by field-effect doping, was observed in epitaxial SrTi O3 -based transistors.

Original languageEnglish
Article number212116
JournalApplied Physics Letters
Volume88
Issue number21
DOIs
Publication statusPublished - 2006 May 21
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Shibuya, K., Ohnishi, T., Uozumi, T., Sato, T., Lippmaa, M., Kawasaki, M., Nakajima, K., Chikyow, T., & Koinuma, H. (2006). Field-effect modulation of the transport properties of nondoped SrTiO 3. Applied Physics Letters, 88(21), [212116]. https://doi.org/10.1063/1.2207502