Field effect-induced quasi-one-dimensional electron transport in GaAs/AlxGa1-x As heterostructures

J. Herfort, D. G. Austing, Y. Hirayama

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1 Citation (Scopus)


We describe an approach to realize quasi-one-dimensional electron gases using an undoped GaAs/AlxGa1-xAs heterostructure. It is demonstrated that with a combination of ion implanted ohmic regions and a narrow top gate, a quasi-one-dimensional electron gas with a very high electron density can be formed. The width of the narrow top gate is varied between 0.4 and 1.0 μm. The wires are characterized by low temperature magnetotransport experiments. The effective wire width is found to be comparable to the gate width. The high mobility of about 95 m2/V s is only 5%-10% less than that obtained in a two-dimensional electron gas of the same material and is maintained at low temperatures.

Original languageEnglish
Pages (from-to)4384-4387
Number of pages4
JournalJournal of Applied Physics
Issue number9
Publication statusPublished - 1997 Nov 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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