Field crystallization of anodic niobia on Nb-O substrates

H. Habazaki, T. Ogasawara, H. Konno, K. Shimizu, K. Asami, S. Nagata, K. Takayama, P. Skeldon, G. E. Thompson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Solid-solution Nb-O films, containing up to 50 at% oxygen, prepared by magnetron sputtering were used to investigate the influence of the oxygen on field crystallization during anodizing at 100 V in 0.1 mol dm-3 ammonium pentaborate electrolyte at 333 K. The findings reveal that field crystallization is hindered dramatically by addition of 20 at% oxygen to the substrate, while no crystallization occurs for an Nb-50 at% O substrate. Prior thermal treatment accelerates field crystallization of niobium, but not of the Nb-50 at% O substrate. The thermal treatment is considered to promote generation of pre-cursor sites for crystal nucleation. However, sufficient oxygen in the substrate may restrict pre-cursor development and/or reduce the compressive stresses in the amorphous anodic niobia that can facilitate crystal growth. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationCorrosion and Electrochemistry of Advanced Materials, In Honor of Koji Hashimoto
PublisherElectrochemical Society Inc.
Pages343-349
Number of pages7
Edition4
ISBN (Electronic)1566774977
ISBN (Print)1566774977, 9781566774970
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event208th Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 21

Publication series

NameECS Transactions
Number4
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other208th Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityLos Angeles, CA
Period05/10/1605/10/21

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Field crystallization of anodic niobia on Nb-O substrates'. Together they form a unique fingerprint.

Cite this