FG width scalability of the 3-D vertical FG NAND using the sidewall control gate (SCG)

Moon Sik Seo, Tetsuo Endoh

Research output: Contribution to journalArticlepeer-review


Recently, the 3-D vertical Floating Gate (FG) type NAND cell arrays with the Sidewall Control Gate (SCG), such as ESCG, DC-SF and S-SCG, are receiving attention to overcome the reliability issues of Charge Trap (CT) type device. Using this novel cell structure, highly reliable flash cell operations were successfully implemented without interference effect on the FG type cell. However, the 3-D vertical FG type cell has large cell size by about 60% for the cylindrical FG structure. In this point of view, we intensively investigate the scalability of the FG width of the 3-D vertical FG NAND cells. In case of the planar FG type NAND cell, the FG height cannot be scaled down due to the necessity of obtaining sufficient coupling ratio and high program speed. In contrast, for the 3-D vertical FG NAND with SCG, the FG is formed cylindrically, which is fully covered with surrounded CG, and very high CG coupling ratio can be achieved. As results, the scaling of FG width of the 3-D vertical FG NAND cell with S-SCG can be successfully demonstrated at 10 nm regime, which is almost the same as the CT layer of recent BE-SONOS NAND.

Original languageEnglish
Pages (from-to)891-897
Number of pages7
JournalIEICE Transactions on Electronics
Issue number5
Publication statusPublished - 2012 May


  • 3-D vertical stacked cell
  • Extended sidewall control gate (ESCG)
  • Floating gate (FG)
  • NAND flash memory
  • Separated sidewall control gate (SSCG)
  • Sidewall control gate (SCG)
  • Stacked-surrounding gate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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