TY - GEN
T1 - FET properties of surface silylated single wall carbon nanotubes
AU - Kumashiro, Ryotaro
AU - Hiroshiba, Nobuya
AU - Ohashi, Hirotaka
AU - Akasaka, Takeshi
AU - Maeda, Yutaka
AU - Suzuki, Shinzo
AU - Achiba, Yohji
AU - Hatakeyama, Rikizo
AU - Tanigaki, Katsumi
PY - 2006/12/1
Y1 - 2006/12/1
N2 - Electric transport properties of chemically modificated carbon nanotubes (CNTs) using Si-containing organic molecules were investigated by means of the field effect transistors (FETs) technique, and presented the comparison of the FET properties between separated individual and spread-sheet samples. From the results of FET measurements for both separated individual and spread-sheet samples, it was shown that p-type semiconducting CNTs can be converted to n-type ones by exohedral silylation. It is suggested that the electron carrier are doped into CNTs from the additional silyl groups, that is, the electronic properties of CNTs can be controlled by chemically modifications of outer surface.
AB - Electric transport properties of chemically modificated carbon nanotubes (CNTs) using Si-containing organic molecules were investigated by means of the field effect transistors (FETs) technique, and presented the comparison of the FET properties between separated individual and spread-sheet samples. From the results of FET measurements for both separated individual and spread-sheet samples, it was shown that p-type semiconducting CNTs can be converted to n-type ones by exohedral silylation. It is suggested that the electron carrier are doped into CNTs from the additional silyl groups, that is, the electronic properties of CNTs can be controlled by chemically modifications of outer surface.
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M3 - Conference contribution
AN - SCOPUS:40949102695
SN - 9781604234152
T3 - Materials Research Society Symposium Proceedings
SP - 142
EP - 147
BT - Nanowires and Carbon Nanotubes
T2 - 2006 MRS Fall Meeting
Y2 - 27 November 2006 through 29 November 2006
ER -