FET properties of surface silylated single wall carbon nanotubes

Ryotaro Kumashiro; Nobuya Hiroshiba; Hirotaka Ohashi; Takeshi Akasaka; Yutaka Maeda; Shinzo Suzuki; Yohji Achiba; Rikizo Hatakeyama; Katsumi Tanigaki

FET properties of surface silylated single wall carbon nanotubes

Ryotaro Kumashiro, Nobuya Hiroshiba, Hirotaka Ohashi, Takeshi Akasaka, Yutaka Maeda, Shinzo Suzuki, Yohji Achiba, Rikizo Hatakeyama, Katsumi Tanigaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electric transport properties of chemically modificated carbon nanotubes (CNTs) using Si-containing organic molecules were investigated by means of the field effect transistors (FETs) technique, and presented the comparison of the FET properties between separated individual and spread-sheet samples. From the results of FET measurements for both separated individual and spread-sheet samples, it was shown that p-type semiconducting CNTs can be converted to n-type ones by exohedral silylation. It is suggested that the electron carrier are doped into CNTs from the additional silyl groups, that is, the electronic properties of CNTs can be controlled by chemically modifications of outer surface.

Original language	English
Title of host publication	Nanowires and Carbon Nanotubes
Subtitle of host publication	Science and Applications
Pages	142-147
Number of pages	6
Publication status	Published - 2006 Dec 1
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: 2006 Nov 27 → 2006 Nov 29

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	963
ISSN (Print)	0272-9172

Other

Other	2006 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	06/11/27 → 06/11/29

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

FET properties of surface silylated single wall carbon nanotubes. / Kumashiro, Ryotaro; Hiroshiba, Nobuya; Ohashi, Hirotaka; Akasaka, Takeshi; Maeda, Yutaka; Suzuki, Shinzo; Achiba, Yohji; Hatakeyama, Rikizo; Tanigaki, Katsumi.

Nanowires and Carbon Nanotubes: Science and Applications. 2006. p. 142-147 (Materials Research Society Symposium Proceedings; Vol. 963).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kumashiro, R, Hiroshiba, N, Ohashi, H, Akasaka, T, Maeda, Y, Suzuki, S, Achiba, Y, Hatakeyama, R & Tanigaki, K 2006, FET properties of surface silylated single wall carbon nanotubes. in Nanowires and Carbon Nanotubes: Science and Applications. Materials Research Society Symposium Proceedings, vol. 963, pp. 142-147, 2006 MRS Fall Meeting, Boston, MA, United States, 06/11/27.

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AU - Kumashiro, Ryotaro

AU - Hiroshiba, Nobuya

AU - Ohashi, Hirotaka

AU - Akasaka, Takeshi

AU - Maeda, Yutaka

AU - Suzuki, Shinzo

AU - Achiba, Yohji

AU - Hatakeyama, Rikizo

AU - Tanigaki, Katsumi

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N2 - Electric transport properties of chemically modificated carbon nanotubes (CNTs) using Si-containing organic molecules were investigated by means of the field effect transistors (FETs) technique, and presented the comparison of the FET properties between separated individual and spread-sheet samples. From the results of FET measurements for both separated individual and spread-sheet samples, it was shown that p-type semiconducting CNTs can be converted to n-type ones by exohedral silylation. It is suggested that the electron carrier are doped into CNTs from the additional silyl groups, that is, the electronic properties of CNTs can be controlled by chemically modifications of outer surface.

AB - Electric transport properties of chemically modificated carbon nanotubes (CNTs) using Si-containing organic molecules were investigated by means of the field effect transistors (FETs) technique, and presented the comparison of the FET properties between separated individual and spread-sheet samples. From the results of FET measurements for both separated individual and spread-sheet samples, it was shown that p-type semiconducting CNTs can be converted to n-type ones by exohedral silylation. It is suggested that the electron carrier are doped into CNTs from the additional silyl groups, that is, the electronic properties of CNTs can be controlled by chemically modifications of outer surface.

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FET properties of surface silylated single wall carbon nanotubes

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