FET characteristics of dinaphthothienothiophene (DNTT) on Si/SiO 2 substrates with various surface-modifications

Tatsuya Yamamoto, Kazuo Takimiya

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Field-effect transistors (FETs) consisting of vapor-deposited thin-film of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) as an active layer on silanized Si/SiO2 substrates were fabricated and evaluated. Depending on the length of alkyl groups in silanization reagents, FET characteristics of the devices were affected: with octadecyltrichlorosilane (C18-OTS), devices showing superior FET characteristics up to FET mobility of 3.1 cm2 V-1 s-1 were obtained.

Original languageEnglish
Pages (from-to)57-59
Number of pages3
JournalJournal of Photopolymer Science and Technology
Volume20
Issue number1
DOIs
Publication statusPublished - 2007 Sep 10
Externally publishedYes

Keywords

  • Naphthalene
  • OTS
  • Organic field-effect transistor
  • Thienothiophene

ASJC Scopus subject areas

  • Polymers and Plastics
  • Organic Chemistry
  • Materials Chemistry

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