Ferromagnetism in new diluted magnetic semiconductor Bi2-xFexTe3

V. A. Kulbachinskii, A. Yu Kaminskii, K. Kindo, Y. Narumi, K. Suga, P. Lostak, P. Svanda

Research output: Contribution to journalArticlepeer-review

81 Citations (Scopus)

Abstract

Single crystals of the new diluted magnetic semiconductors of p-Bi2-xFexTe3 (0≤x≤0.08) and n-Bi2-xFexSe3 (0≤x≤0.04) have been produced. Magnetization and magnetic susceptibility have been measured in the temperature interval 2-300 K. The ferromagnetic phase was found in p-Bi2-xFexTe3 at a temperature Tc which increases with Fe content x up to Tc = 12K for x = 0.08, while hole concentration decreases, i.e., iron atoms exhibit donor properties. The easy-axis for magnetization is parallel to the C3 crystallographic axis. In n-type samples, Bi2-xFexSe3 ferromagnetic transition was not found. The de Haas-van Alphen effect was clearly observed with the frequency of oscillation decreasing with Fe doping. We observed also the jump of the resistivity at T = Tc. The Seebeck coefficient α also has been measured at room temperature. With an increase in the content x of Fe atoms, the value of α increases from α = 215 μV/K in the host material p-Bi2Te3 to 260 μV/K in Bi1.92Fe0.08Te3 with maximal Fe content.

Original languageEnglish
Pages (from-to)292-297
Number of pages6
JournalPhysica B: Condensed Matter
Volume311
Issue number3-4
DOIs
Publication statusPublished - 2002 Feb

Keywords

  • Diluted magnetic semiconductors
  • Ferromagnetism

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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