TY - JOUR
T1 - Ferromagnetism in III-V and II-VI semiconductor structures
AU - Dietl, T.
AU - Ohno, H.
N1 - Funding Information:
The work at Tohoku University was supported by the Japan Society for the Promotion of Science and by the Ministry of Education, Japan; the work in Poland by State Committee for Scientific Research, Grant No. 2-P03B-02417, and by Foundation for Polish Science. We are grateful to F. Matsukura and Y. Ohno for collaboration on III–V magnetic semiconductors. One of us (T.D.) thanks J. Jaroszyński and P. Kossacki in Warsaw and J. Cibert and D. Ferrand in Grenoble for collaboration on II–VI magnetic semiconductors.
PY - 2001/1
Y1 - 2001/1
N2 - The current status of research on the carrier-mediated ferromagnetism in tetrahedrally coordinated semiconductors is briefly reviewed. The experimental results for III-V semiconductors, where Mn atoms introduce both spins and holes, are compared to the case of II-VI compounds, in which the ferromagnetism has been observed for the modulation-doped p-type Cd1-xMnxTe/Cd1-y-zMgyZnzTe:N heterostructures, and more recently, in Zn1-xMnxTe:N epilayers. On the theoretical side, a model is presented, which takes into account: (i) strong spin-orbit and kp couplings in the valence band; (ii) the effect of confinement and strain upon the hole density-of-states and response function, and (iii) the influence of disorder and carrier-carrier interactions, particularly near the metal-to-insulator transition. A comparison between the experimental and theoretical results demonstrates that the model can describe the magnetic circular dichroism, the values of TC observed in the studied systems as well as explain the directions of the easy axis and the magnitudes of the corresponding anisotropy fields as a function of confinement and biaxial strain. Various suggestions concerning design of novel ferromagnetic semiconductor systems are described.
AB - The current status of research on the carrier-mediated ferromagnetism in tetrahedrally coordinated semiconductors is briefly reviewed. The experimental results for III-V semiconductors, where Mn atoms introduce both spins and holes, are compared to the case of II-VI compounds, in which the ferromagnetism has been observed for the modulation-doped p-type Cd1-xMnxTe/Cd1-y-zMgyZnzTe:N heterostructures, and more recently, in Zn1-xMnxTe:N epilayers. On the theoretical side, a model is presented, which takes into account: (i) strong spin-orbit and kp couplings in the valence band; (ii) the effect of confinement and strain upon the hole density-of-states and response function, and (iii) the influence of disorder and carrier-carrier interactions, particularly near the metal-to-insulator transition. A comparison between the experimental and theoretical results demonstrates that the model can describe the magnetic circular dichroism, the values of TC observed in the studied systems as well as explain the directions of the easy axis and the magnitudes of the corresponding anisotropy fields as a function of confinement and biaxial strain. Various suggestions concerning design of novel ferromagnetic semiconductor systems are described.
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U2 - 10.1016/S1386-9477(00)00193-4
DO - 10.1016/S1386-9477(00)00193-4
M3 - Article
AN - SCOPUS:0035151869
VL - 9
SP - 185
EP - 193
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1
ER -