Ferromagnetism and ferroelectricity of Bi                         2                         O                         3                         -Fe                         2                         O                         3                         -PbTiO                         3                          amorphous oxide films prepared by gel-coating technique

Takaya Wada; Yuichi Tokunaga; Atsushi Kajima; Mitsuteru Inoue; Toshitaka Fujii; Balachandran Jeyadevan; Kazuyuki Tohji

doi:10.1016/S0169-4332(96)00792-1

Ferromagnetism and ferroelectricity of Bi ₂ O ₃ -Fe ₂ O ₃ -PbTiO ₃ amorphous oxide films prepared by gel-coating technique

Takaya Wada, Yuichi Tokunaga, Atsushi Kajima, Mitsuteru Inoue, Toshitaka Fujii, Balachandran Jeyadevan, Kazuyuki Tohji

Environmental Studies (department affiliation only)

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Previously we reported that rf-sputtered Bi ₂ O ₃ -Fe ₂ O ₃ -ABO ₃ films (ABO ₃ : Perovskite either of BaTiO ₃ , PbTiO ₃ , or PbZrO ₃ ) have pronounced properties exhibiting magnetic as well as dielectric hysteresis loops simultaneously above room temperature for films with a restricted Fe ₂ O ₃ -concentration of about 70 at% after subject to thermal annealing at about 700°C. In the present study, we have prepared the same oxide films by the sol-gel method, where PbTiO ₃ was chosen for ABO ₃ . It was found that gel-coated films onto glass substrates and/or low-resistivity Si-wafers also possess the properties similar to those of rf-sputtered films. Microstructure of the films was examined by EXAFS measurement at the Fe-absorption edge. It may be concluded that a disordered oxide state having a random glass network structure is essential for realizing magnetic and dielectric ordered state, presumably caused by strong frustration in a glassy antiferromagnet.

Original language	English
Pages (from-to)	212-216
Number of pages	5
Journal	Applied Surface Science
Volume	113-114
DOIs	https://doi.org/10.1016/S0169-4332(96)00792-1
Publication status	Published - 1997 Apr

Keywords

Amorphous oxide films
EXAFS
Ferroelectricity
Ferromagnetism
Sol-gel method
Spin-on process

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(96)00792-1

Cite this

Wada, T., Tokunaga, Y., Kajima, A., Inoue, M., Fujii, T., Jeyadevan, B., & Tohji, K. (1997). Ferromagnetism and ferroelectricity of Bi ₂ O ₃ -Fe ₂ O ₃ -PbTiO ₃ amorphous oxide films prepared by gel-coating technique Applied Surface Science, 113-114, 212-216. https://doi.org/10.1016/S0169-4332(96)00792-1

Ferromagnetism and ferroelectricity of Bi ₂ O ₃ -Fe ₂ O ₃ -PbTiO ₃ amorphous oxide films prepared by gel-coating technique . / Wada, Takaya; Tokunaga, Yuichi; Kajima, Atsushi et al.

In: Applied Surface Science, Vol. 113-114, 04.1997, p. 212-216.

Research output: Contribution to journal › Article › peer-review

Wada, T, Tokunaga, Y, Kajima, A, Inoue, M, Fujii, T, Jeyadevan, B & Tohji, K 1997, ' Ferromagnetism and ferroelectricity of Bi ₂ O ₃ -Fe ₂ O ₃ -PbTiO ₃ amorphous oxide films prepared by gel-coating technique ', Applied Surface Science, vol. 113-114, pp. 212-216. https://doi.org/10.1016/S0169-4332(96)00792-1

Wada T, Tokunaga Y, Kajima A, Inoue M, Fujii T, Jeyadevan B et al. Ferromagnetism and ferroelectricity of Bi ₂ O ₃ -Fe ₂ O ₃ -PbTiO ₃ amorphous oxide films prepared by gel-coating technique Applied Surface Science. 1997 Apr;113-114:212-216. https://doi.org/10.1016/S0169-4332(96)00792-1

Wada, Takaya ; Tokunaga, Yuichi ; Kajima, Atsushi et al. / Ferromagnetism and ferroelectricity of Bi ₂ O ₃ -Fe ₂ O ₃ -PbTiO ₃ amorphous oxide films prepared by gel-coating technique In: Applied Surface Science. 1997 ; Vol. 113-114. pp. 212-216.

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title = " Ferromagnetism and ferroelectricity of Bi 2 O 3 -Fe 2 O 3 -PbTiO 3 amorphous oxide films prepared by gel-coating technique ",

abstract = " Previously we reported that rf-sputtered Bi 2 O 3 -Fe 2 O 3 -ABO 3 films (ABO 3 : Perovskite either of BaTiO 3 , PbTiO 3 , or PbZrO 3 ) have pronounced properties exhibiting magnetic as well as dielectric hysteresis loops simultaneously above room temperature for films with a restricted Fe 2 O 3 -concentration of about 70 at% after subject to thermal annealing at about 700°C. In the present study, we have prepared the same oxide films by the sol-gel method, where PbTiO 3 was chosen for ABO 3 . It was found that gel-coated films onto glass substrates and/or low-resistivity Si-wafers also possess the properties similar to those of rf-sputtered films. Microstructure of the films was examined by EXAFS measurement at the Fe-absorption edge. It may be concluded that a disordered oxide state having a random glass network structure is essential for realizing magnetic and dielectric ordered state, presumably caused by strong frustration in a glassy antiferromagnet. ",

keywords = "Amorphous oxide films, EXAFS, Ferroelectricity, Ferromagnetism, Sol-gel method, Spin-on process",

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AU - Inoue, Mitsuteru

AU - Fujii, Toshitaka

AU - Jeyadevan, Balachandran

AU - Tohji, Kazuyuki

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N2 - Previously we reported that rf-sputtered Bi 2 O 3 -Fe 2 O 3 -ABO 3 films (ABO 3 : Perovskite either of BaTiO 3 , PbTiO 3 , or PbZrO 3 ) have pronounced properties exhibiting magnetic as well as dielectric hysteresis loops simultaneously above room temperature for films with a restricted Fe 2 O 3 -concentration of about 70 at% after subject to thermal annealing at about 700°C. In the present study, we have prepared the same oxide films by the sol-gel method, where PbTiO 3 was chosen for ABO 3 . It was found that gel-coated films onto glass substrates and/or low-resistivity Si-wafers also possess the properties similar to those of rf-sputtered films. Microstructure of the films was examined by EXAFS measurement at the Fe-absorption edge. It may be concluded that a disordered oxide state having a random glass network structure is essential for realizing magnetic and dielectric ordered state, presumably caused by strong frustration in a glassy antiferromagnet.

AB - Previously we reported that rf-sputtered Bi 2 O 3 -Fe 2 O 3 -ABO 3 films (ABO 3 : Perovskite either of BaTiO 3 , PbTiO 3 , or PbZrO 3 ) have pronounced properties exhibiting magnetic as well as dielectric hysteresis loops simultaneously above room temperature for films with a restricted Fe 2 O 3 -concentration of about 70 at% after subject to thermal annealing at about 700°C. In the present study, we have prepared the same oxide films by the sol-gel method, where PbTiO 3 was chosen for ABO 3 . It was found that gel-coated films onto glass substrates and/or low-resistivity Si-wafers also possess the properties similar to those of rf-sputtered films. Microstructure of the films was examined by EXAFS measurement at the Fe-absorption edge. It may be concluded that a disordered oxide state having a random glass network structure is essential for realizing magnetic and dielectric ordered state, presumably caused by strong frustration in a glassy antiferromagnet.

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KW - Sol-gel method

KW - Spin-on process

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