Abstract
Previously we reported that rf-sputtered Bi 2 O 3 -Fe 2 O 3 -ABO 3 films (ABO 3 : Perovskite either of BaTiO 3 , PbTiO 3 , or PbZrO 3 ) have pronounced properties exhibiting magnetic as well as dielectric hysteresis loops simultaneously above room temperature for films with a restricted Fe 2 O 3 -concentration of about 70 at% after subject to thermal annealing at about 700°C. In the present study, we have prepared the same oxide films by the sol-gel method, where PbTiO 3 was chosen for ABO 3 . It was found that gel-coated films onto glass substrates and/or low-resistivity Si-wafers also possess the properties similar to those of rf-sputtered films. Microstructure of the films was examined by EXAFS measurement at the Fe-absorption edge. It may be concluded that a disordered oxide state having a random glass network structure is essential for realizing magnetic and dielectric ordered state, presumably caused by strong frustration in a glassy antiferromagnet.
Original language | English |
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Pages (from-to) | 212-216 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 113-114 |
DOIs | |
Publication status | Published - 1997 Apr |
Keywords
- Amorphous oxide films
- EXAFS
- Ferroelectricity
- Ferromagnetism
- Sol-gel method
- Spin-on process
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films