Ferromagnetic tunneling effect in NiFe/GdOx/Co and NiFe/AlOx/Co junctions made by electron beam deposition

Masashi Ohba; Yoshihisa Obi; Koki Takanashi; Hiroyasu Fujimori

Ferromagnetic tunneling effect in NiFe/GdO_x/Co and NiFe/AlO_x/Co junctions made by electron beam deposition

Masashi Ohba, Yoshihisa Obi, Koki Takanashi, Hiroyasu Fujimori

Materials Development Division

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Ferromagnetic tunneling effect has been investigated experimentally on the ferromagnetic-ferromagnetic metal junctions with insulator barrier such as 80NiFe/GdO_x/Co and 80NiFe/AlO_x/Co sandwich films fabricated by an electron beam deposition method under various conditions. Results of measurements of magnetization and magnetoresistance for several samples as a function of external magnetic field show the typical behavior for the ferromagnetic tunneling effect. The largest value of magnetoresistance ratio obtained in the present samples is 1.3%. This value is of about one-third compared to that by obtained by Miyazaki et al and far smaller than the theoretically expected value (about 10%). One of the reason of this small value may come from the quality of the barrier.

Original language	English
Pages (from-to)	161-164
Number of pages	4
Journal	Science Reports of the Rerearch Institutes Tohoku University Series A-Physics
Volume	42
Issue number	1
Publication status	Published - 1996 Mar 1

Keywords

Ferromagnetic tunneling effect
Magnetoresistance
NiFe/AlO/Co
NiFe/GdO/Co
Tunnel junction

ASJC Scopus subject areas

Condensed Matter Physics
Metals and Alloys

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abstract = "Ferromagnetic tunneling effect has been investigated experimentally on the ferromagnetic-ferromagnetic metal junctions with insulator barrier such as 80NiFe/GdOx/Co and 80NiFe/AlOx/Co sandwich films fabricated by an electron beam deposition method under various conditions. Results of measurements of magnetization and magnetoresistance for several samples as a function of external magnetic field show the typical behavior for the ferromagnetic tunneling effect. The largest value of magnetoresistance ratio obtained in the present samples is 1.3%. This value is of about one-third compared to that by obtained by Miyazaki et al and far smaller than the theoretically expected value (about 10%). One of the reason of this small value may come from the quality of the barrier.",

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AU - Ohba, Masashi

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AU - Takanashi, Koki

AU - Fujimori, Hiroyasu

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