Ferromagnetic tunnel junctions with high thermal stability

Y. Ando, S. Iura, H. Kubota, T. Miyazaki, C. S. Yoon, J. H. Lee, D. H. Im, C. K. Kim

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The junctions exposed to pure oxygen at the interface between the bottom CoFe layer and Al-oxide insulator were prepared. The junctions showed high thermal stability of tunnel magnetoresistance (TMR) ratio up to 375°C in comparison with the standard junction oxidized with plasma. Auger electron spectroscopy (AES) profiles revealed that the Mn diffusion occurred even for the junction with high thermal stability after annealing over 375°C. A large amount of oxygen existing at the interface might oxidize the Mn diffusing at the interface.

Original languageEnglish
Pages (from-to)e1507-e1509
JournalJournal of Magnetism and Magnetic Materials
Volume272-276
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2004 May 1

Keywords

  • Interface
  • TMR
  • Thermal stability
  • Tunnel junction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Ferromagnetic tunnel junctions with high thermal stability'. Together they form a unique fingerprint.

Cite this