Ferromagnetic semiconductors for spintronics

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

An overview is given for the current understanding of the ferromagnetism in manganese-doped III-V compounds together with the description on prototype device structures that allow us to explore a number of new possibilities in spintronics.

Original languageEnglish
Pages (from-to)19-21
Number of pages3
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - 2006 Apr 1
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: 2005 Jul 242005 Jul 29

Keywords

  • Ferromagnetism
  • III-V semiconductors
  • Spintronics
  • Transition metal doping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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