Ferromagnetic semiconductors for spin electronics

Modern information technology utilizes the charge degree of freedom of electrons to process information in semiconductors and the spin degree of freedom for mass storage of information in magnetic materials. If both charge and spin degrees of freedom are available in semiconductors, we expect to be able to create new functionalities and enhance the performance of existing devices. To do so, we need to be able to create, sustain, transport, control, and detect spins in semiconductors, which is a challenge for semiconductor physics, materials, and technology. Hole-induced ferromagnetism in transition metal doped III-V compounds offers integration of ferromagnetism with the existing nonmagnetic III-V heterostructures. These structures allow us to explore spin-dependent phenomena in semiconductor heterostructures, which may lead us to a new form of electronics, spin-electronics (spintronics), where both the spin and charge degrees of freedom play critical roles.