Ferromagnetic semiconductors for spin electronics

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Modern information technology utilizes the charge degree of freedom of electrons to process information in semiconductors and the spin degree of freedom for mass storage of information in magnetic materials. If both charge and spin degrees of freedom are available in semiconductors, we expect to be able to create new functionalities and enhance the performance of existing devices. To do so, we need to be able to create, sustain, transport, control, and detect spins in semiconductors, which is a challenge for semiconductor physics, materials, and technology. Hole-induced ferromagnetism in transition metal doped III-V compounds offers integration of ferromagnetism with the existing nonmagnetic III-V heterostructures. These structures allow us to explore spin-dependent phenomena in semiconductor heterostructures, which may lead us to a new form of electronics, spin-electronics (spintronics), where both the spin and charge degrees of freedom play critical roles.

Original languageEnglish
Pages (from-to)105-107
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume242-245
Issue numberPART I
DOIs
Publication statusPublished - 2002 Apr 1

Keywords

  • Ferromagnetic semiconductors
  • Hall resistivity
  • Spin electronics
  • Spin injection
  • Tunnel magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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