TY - JOUR
T1 - Ferromagnetic semiconductors for spin electronics
AU - Ohno, Hideo
N1 - Funding Information:
The author thanks F. Matsukura, Y. Ohno, T. Dietl, and D.D. Awschalom for illuminating discussion and fruitful collaboration. The electrical spin-injection work is a result of collaborative work with D.D. Awschalom and his team. The work at Tohoku University was supported in part by the “Research for the Future” Program (# JSPS-RFTF97P00202) from the Japan Society for the Promotion of Science and by a Grant-in-Aid (# 12305001) from the Ministry of Education, Culture, Sports, Science, and Technology, Japan.
PY - 2002/4
Y1 - 2002/4
N2 - Modern information technology utilizes the charge degree of freedom of electrons to process information in semiconductors and the spin degree of freedom for mass storage of information in magnetic materials. If both charge and spin degrees of freedom are available in semiconductors, we expect to be able to create new functionalities and enhance the performance of existing devices. To do so, we need to be able to create, sustain, transport, control, and detect spins in semiconductors, which is a challenge for semiconductor physics, materials, and technology. Hole-induced ferromagnetism in transition metal doped III-V compounds offers integration of ferromagnetism with the existing nonmagnetic III-V heterostructures. These structures allow us to explore spin-dependent phenomena in semiconductor heterostructures, which may lead us to a new form of electronics, spin-electronics (spintronics), where both the spin and charge degrees of freedom play critical roles.
AB - Modern information technology utilizes the charge degree of freedom of electrons to process information in semiconductors and the spin degree of freedom for mass storage of information in magnetic materials. If both charge and spin degrees of freedom are available in semiconductors, we expect to be able to create new functionalities and enhance the performance of existing devices. To do so, we need to be able to create, sustain, transport, control, and detect spins in semiconductors, which is a challenge for semiconductor physics, materials, and technology. Hole-induced ferromagnetism in transition metal doped III-V compounds offers integration of ferromagnetism with the existing nonmagnetic III-V heterostructures. These structures allow us to explore spin-dependent phenomena in semiconductor heterostructures, which may lead us to a new form of electronics, spin-electronics (spintronics), where both the spin and charge degrees of freedom play critical roles.
KW - Ferromagnetic semiconductors
KW - Hall resistivity
KW - Spin electronics
KW - Spin injection
KW - Tunnel magnetoresistance
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U2 - 10.1016/S0304-8853(01)01210-0
DO - 10.1016/S0304-8853(01)01210-0
M3 - Article
AN - SCOPUS:0036531582
VL - 242-245
SP - 105
EP - 107
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
IS - PART I
ER -