Ferromagnetic semiconductor heterostructures for spintronics

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24 Citations (Scopus)

Abstract

Ferromagnetism in transition-metal-doped III-V and II-VI compound semiconductors and their heterostructures allow exploration of unprecedented possibilities, in which spin degrees of freedom and more common charge degrees of freedom are combined. These include quantum heterostructures that incorporate ferromagnetism, electric field as well as light control of ferromagnetism, and magnetization reversal by electrical means. Possibilities of achieving high ferromagnetic-transition temperature are also discussed.

Original languageEnglish
Pages (from-to)945-954
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume54
Issue number5
DOIs
Publication statusPublished - 2007 May 1

Keywords

  • (Ga,Mn)As
  • (In,Mn)As
  • Anomalous Hall effect
  • Ferromagnetic semiconductors
  • II-VI compounds
  • III-V compounds
  • Magnetic circular dichroism
  • Magnetic tunneling junctions
  • Magnetization manipulation
  • p-d Zener model

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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