Ferroelectric Sr2(Ta1-x, Nbx)2O7 with a low dielectric constant by plasma physical vapor deposition and oxygen radical treatment

Ichirou Takahashi, Hiroyuki Sakurai, Atsuhiko Yamada, Kiyoshi Funaiwa, Kentaro Hirai, Shinichi Urabe, Tetsuya Goto, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

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7 Citations (Scopus)

Abstract

The compounds of the Sr2Nb2O7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectric constant ferroelectric Sr2(Ta1-x,Nbx)2O7 (STN) film formation technology which is applied to floating gate type ferroelectric random access memory (FFRAM) has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and an oxygen radical treatment using microwave-excited (2.45 GHz) high-density (>1012 cm-3) low electron temperature (<1 eV) Kr/O2 plasma.

Original languageEnglish
Pages (from-to)2050-2054
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 B
DOIs
Publication statusPublished - 2003 Apr

Keywords

  • Ferroelectric thin film
  • IrO
  • Low dielectric constant
  • MFMIS-FET
  • Oxygen radical treatment
  • Plasma physical vapor deposition
  • Sr(Ta,Nb)O (STN)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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