TY - JOUR
T1 - Ferroelectric single crystal recording media fabricated by polarization controlled wet etching process
AU - Hiranaga, Yoshiomi
AU - Wagatsuma, Yasuo
AU - Cho, Yasuo
PY - 2004/4/15
Y1 - 2004/4/15
N2 - Ferroelectric single crystal thin plates are promising materials for ultrahigh-density storage devices. In order to fabricate recording media with large area and high homogeneity, a polarization controlled wet etching process was developed in this paper. Differential etch rates of ferroelectrics are useful in controlling the thickness during the wet etching process. By applying DC voltage to a substrate, the etching process can be stopped when the thickness reaches the desired value. A 455-nm-thick LiTaO3 thin plate with a diameter of 3 mm was prepared using this method. Nanodomains were artificially formed by applying voltage pulses to the substrate using a metal-coated cantilever top electrode.
AB - Ferroelectric single crystal thin plates are promising materials for ultrahigh-density storage devices. In order to fabricate recording media with large area and high homogeneity, a polarization controlled wet etching process was developed in this paper. Differential etch rates of ferroelectrics are useful in controlling the thickness during the wet etching process. By applying DC voltage to a substrate, the etching process can be stopped when the thickness reaches the desired value. A 455-nm-thick LiTaO3 thin plate with a diameter of 3 mm was prepared using this method. Nanodomains were artificially formed by applying voltage pulses to the substrate using a metal-coated cantilever top electrode.
KW - Differential etch rate
KW - Ferroelectric data storage
KW - Lithium tantalite
KW - Nanodomain
KW - Scanning nonlinear dielectric microscopy
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U2 - 10.1143/jjap.43.l569
DO - 10.1143/jjap.43.l569
M3 - Article
AN - SCOPUS:3042840124
SN - 0021-4922
VL - 43
SP - L569-L571
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 4 B
ER -