Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films were analyzed. The thin films were grown by metalorganic chemical vapor deposition on (111)SrRuO3∥(111)SrTiO3 substrates. The analysis showed that the remanent polarization (Pr) value of La substituted Bi4Ti3O12 thin films was smaller as compared to the Nd substituted thin films.
ASJC Scopus subject areas
- Physics and Astronomy(all)