Ferroelectric Ba Ti2 O5 thin film prepared by laser ablation

Chuanbin Wang, Rong Tu, Takashi Goto

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Ferroelectric b -axis oriented Ba Ti2 O5 thin film was successfully prepared on MgO (100) substrates by laser ablation. The effects of substrate temperature (Tsub) and oxygen partial pressure (PO2) on the crystal structure, surface morphology, and dielectric property of the film were investigated. Ba Ti2 O5 thin films were obtained at Tsub =923-973 K and PO2 =vacuum to 17.5 Pa on MgO (100) substrates. The orientation of the films changed from (710) to (020) depending on Tsub and PO2. The optimum conditions for preparing film with a dense and elongated texture were Tsub =973 K and PO2 =12.5 Pa. The permittivity of the ferroelectric b -axis oriented Ba Ti2 O5 thin film showed a sharp peak (∼2000) at 750 K.

Original languageEnglish
Pages (from-to)304-307
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume25
Issue number2
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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