Fermi surfaces of LaRhSi3 and CeRhSi3

N. Kimura, Y. Umeda, T. Asai, T. Terashima, H. Aoki

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21 Citations (Scopus)

Abstract

CeRhSi3 has the large electronic specific-heat coefficient γ = 120 mJ/mol K2 and the high Kondo temperature TK approximately 100 K, although its magnetic susceptibility follows the Curie-Weiss law and the specific heat indicates magnetic ordering at 1.8 K. In order to elucidate the 4f-electron nature in CeRhSi3, we have grown single crystals of CeRhSi3 and of its reference material LaRhSi3 and measured the electrical resistivity, the magnetic susceptibility and the de Haas-van Alphen (dHvA) effect. Comparison of the angular dependence of the dHvA frequency in CeRhSi3 to that in LaRhSi3, indicates that the 4f-electrons of CeRhSi3 are itinerant.

Original languageEnglish
Pages (from-to)280-283
Number of pages4
JournalPhysica B: Condensed Matter
Volume294-295
DOIs
Publication statusPublished - 2001 Jan

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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