CeRhSi3 has the large electronic specific-heat coefficient γ = 120 mJ/mol K2 and the high Kondo temperature TK approximately 100 K, although its magnetic susceptibility follows the Curie-Weiss law and the specific heat indicates magnetic ordering at 1.8 K. In order to elucidate the 4f-electron nature in CeRhSi3, we have grown single crystals of CeRhSi3 and of its reference material LaRhSi3 and measured the electrical resistivity, the magnetic susceptibility and the de Haas-van Alphen (dHvA) effect. Comparison of the angular dependence of the dHvA frequency in CeRhSi3 to that in LaRhSi3, indicates that the 4f-electrons of CeRhSi3 are itinerant.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering