Fermi surface properties and de Haas–van Alphen oscillation in both the normal and superconducting mixed states of URu2Si2

H. Ohkuni, Y. Inada, Y. Tokiwa, K. Sakurai, R. Settai, T. Honma, Y. Haga, E. Yamamoto, Y. Ōnuki, H. Yamagami, S. Takahashi, T. Yanagisawa

Research output: Contribution to journalArticle

129 Citations (Scopus)

Abstract

We have succeeded in growing a high-quality single crystal of URu2Si2 with a residual resistivity ratio of 255 and performed magnetoresistance and de Haas–van Alphen (dHvA) experiments. The dHvA oscillations were observed clearly in both the normal and superconducting mixed states. From the magnetoresistance experiments, it is concluded that URu2Si2 is a compensated metal with equal carrier numbers of electrons and holes. In the dHvA experiments we observed three kinds of Fermi surfaces. We studied precisely the Fermi surface properties in both the normal and mixed states. The dHvA frequency does not change in magnitude between the normal and mixed states, while the cyclotron effective mass is reduced, and the corresponding Dingle temperature or scattering rate of the conduction electron increases in the mixed state.

Original languageEnglish
Pages (from-to)1045-1077
Number of pages33
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume79
Issue number7
DOIs
Publication statusPublished - 1999 Jul

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Physics and Astronomy(all)

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