Fermi surface of low carrier compound CeBi

K. Morita, T. Goto, S. Nakamura, Y. Haga, T. Suzuki, Y. Kaneta, O. Sakai

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Fermi surface of low carrier compound CeBi has been investigated by the acoustic dHvA measurement of ultrasonic waves. The Fermi surfaces observed in the ferromagnetic phase of CeBi consist of the hole surfaces β1, β2, β3 and β4 located at Γ point and the electron surfaces α, γ at X points. The angular variation of the dHvA frequencies in CeBi is reproduced by the result of the band calculation based on the p-f mixing effect.

Original languageEnglish
Pages (from-to)192-194
Number of pages3
JournalPhysica B: Condensed Matter
Volume230-232
DOIs
Publication statusPublished - 1997 Feb
Externally publishedYes

Keywords

  • CeBi
  • Fermi surface
  • de Haas-van Alphen effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Morita, K., Goto, T., Nakamura, S., Haga, Y., Suzuki, T., Kaneta, Y., & Sakai, O. (1997). Fermi surface of low carrier compound CeBi. Physica B: Condensed Matter, 230-232, 192-194. https://doi.org/10.1016/S0921-4526(96)00587-X