Fermi surface in LaRhSi3 and CeRhSi3

T. Terashima, M. Kimata, S. Uji, T. Sugawara, N. Kimura, Hayuyoshi Aoki, H. Harima

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36 Citations (Scopus)

Abstract

We report on de Haas-van Alphen (dHvA) effect measurements at ambient pressure and band-structure calculations for LaRhSi3 and CeRhSi3, whose crystal structures lack space-inversion symmetry. For LaRhSi3, dHvA frequencies up to ∼11 kT with effective masses up to ∼1.6 me, where me is the free-electron mass, are observed. The observed and the calculated Fermi surfaces are in satisfactory quantitative agreement. The energy splitting of bands due to the spin-orbit coupling is estimated to be of the order of 102 K. For CeRhSi3, dHvA frequencies up to ∼12 kT with effective masses up to ∼19 me are observed. The dHvA frequency branches are definitely different from those observed in LaRhSi3 and are difficult to explain with the LaRhSi3 Fermi surface. This leads to the conclusion that the Ce4f electrons in CeRhSi3 are itinerant in the antiferromagnetic state at ambient pressure. The Fermi surface resulting from a band-structure calculation in which the Ce4f electrons are treated as itinerant can provide a plausible explanation for the observed frequency branches, although the quantitative agreement is rather limited. The comparison of the calculated density of states with the Sommerfeld coefficient gives the mass enhancement factor of 8.

Original languageEnglish
Article number205107
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume78
Issue number20
DOIs
Publication statusPublished - 2008 Nov 7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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