We report measurements of the ac magnetic susceptibility and de Haas-van Alphen effect (dHvA) in CeRh Si3 up to a pressure P=29.5 kbar with the field in the c direction. The observed Fermi surface suggests that Ce 4f electrons are itinerant even when antiferromagnetic order occurs. Effective masses decrease with P: no enhancement is observed as the antiferromagnetic transition temperature is reduced by the application of pressure. Analyses of dHvA oscillations in the mixed state indicate that the influence of the superconducting energy gap is negligible for some orbits.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2007 Aug 7|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics