Fermi surface and superconductivity in noncentrosymmetric CeRh Si3

T. Terashima, Y. Takahide, T. Matsumoto, S. Uji, N. Kimura, H. Aoki, H. Harima

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


We report measurements of the ac magnetic susceptibility and de Haas-van Alphen effect (dHvA) in CeRh Si3 up to a pressure P=29.5 kbar with the field in the c direction. The observed Fermi surface suggests that Ce 4f electrons are itinerant even when antiferromagnetic order occurs. Effective masses decrease with P: no enhancement is observed as the antiferromagnetic transition temperature is reduced by the application of pressure. Analyses of dHvA oscillations in the mixed state indicate that the influence of the superconducting energy gap is negligible for some orbits.

Original languageEnglish
Article number054506
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number5
Publication statusPublished - 2007 Aug 7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Fermi surface and superconductivity in noncentrosymmetric CeRh Si3'. Together they form a unique fingerprint.

Cite this