The effects of surface treatments and metal species on the performance of ohmic and Schottky contacts to p-type CuGaS2 were discussed. The band diagram of Cu/CuGaS2 Schottky diode was drawn from the results of current-voltage (I-V) and capacitance voltage (C-V) measurements. The furnace temperature of the source and crystallization zones were 800 and 700 °C. The results indicated a surface pinning of the a Fermi level to certain acceptor-type gap states below the midgap.
ASJC Scopus subject areas
- Physics and Astronomy(all)