Feature profile evolution in plasma processing using wireless on-wafer monitoring system

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

Etching profile anomalies occur around large-scale 3-dimensional (3D) structures due to distortion in the ion sheath and ion trajectories. To solve this problem, a system to predict such etching anomalies was developed by combining on-wafer sheath shaped sensor and simulations based on a neural network and a database. The sensor could measure the sheath voltage and saturation ion current density and sheath thickness can be calculated from them. A database was built by using the results from sensor measurements and etching experiments with samples with large vertical steps, which enables prediction of etching shape anomalies from measured parameters. Finally, the system could predict etching shape anomalies around large vertical steps.

Original languageEnglish
Title of host publicationSpringerBriefs in Applied Sciences and Technology
PublisherSpringer Verlag
Pages33-38
Number of pages6
DOIs
Publication statusPublished - 2014 Jan 1

Publication series

NameSpringerBriefs in Applied Sciences and Technology
Volume102
ISSN (Print)2191-530X
ISSN (Electronic)2191-5318

Keywords

  • Ion sheath
  • Ion trajectory
  • Large scaled 3D structure
  • On-wafer sheath shape sensor

ASJC Scopus subject areas

  • Biotechnology
  • Chemical Engineering(all)
  • Mathematics(all)
  • Materials Science(all)
  • Energy Engineering and Power Technology
  • Engineering(all)

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  • Cite this

    Samukawa, S. (2014). Feature profile evolution in plasma processing using wireless on-wafer monitoring system. In SpringerBriefs in Applied Sciences and Technology (pp. 33-38). (SpringerBriefs in Applied Sciences and Technology; Vol. 102). Springer Verlag. https://doi.org/10.1007/978-4-431-54795-2_4