Feasibility study on ultrafine-pitch Cu-Cu bonding using directed self-assembly (DSA)

M. Murugesan, T. Fukushima, K. Mori, H. Hashimoto, Jichel Bea, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A feasibility study was carried out for self-formation of metal wiring between LSI chips containing ultrafine-pitch Cu landing pads by employing a new concept of directed self-assembly (DSA) phenomena. Preliminary results suggest that it is highly feasible to electrically interconnect two LSI chips having Cu landing pads at 3μm pitch interval. Electrical contact between the flip-chip bonded dies was self-formed by dispersed Sn nano-dots in PS-b-PMMA (2:1) copolymer mixture after vacuum annealing at 280 °C.

Original languageEnglish
Title of host publicationProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743034
DOIs
Publication statusPublished - 2017 Jun 13
Event5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan
Duration: 2017 May 162017 May 18

Publication series

NameProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017

Other

Other5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
CountryJapan
CityTokyo
Period17/5/1617/5/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

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