Feasibility of ToF atom-probe analysis of silicon

A. J. Melmed, T. Sakurai, Y. Kuk, E. I. Givargizov

    Research output: Contribution to journalArticlepeer-review

    13 Citations (Scopus)

    Abstract

    Data are presented which establish that silicon with electrical resistivity up to at least 10Ω cm can be field-evaporated and analyzed in a conventional energy-compensated ToF atom-probe instrument.

    Original languageEnglish
    JournalSurface Science
    Volume103
    Issue number2-3
    DOIs
    Publication statusPublished - 1981 Feb 2

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Condensed Matter Physics
    • Surfaces and Interfaces

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